EMH2314
Embossed Taping Speci ? cation
EMH2314-TL-H
No.8759-5/7
相关PDF资料
EMH2408-TL-H MOSFET N-CH DUAL 20V 4A EMH8
EMH2409-TL-H MOSFET N-CH DUAL 30V 4A EMH8
EMH2411R-TL-H MOSFET N-CH DUAL 30V 5A EMH8
EMH2412-TL-H MOSFET N-CH DUAL 24V 6A EMH8
EMH2604-TL-H MOSFET N/P-CH 20V 4A EMH8
EMH2801-TL-H MOSFET/SBD P-CH EMH8
ENW1-EW07 LAMP INCAND T1.5 NEO WEDGE 14V
ENW1-EW87 LAMP T1-1/2 NEO WEDGE 14V 0.140A
相关代理商/技术参数
EMH2401 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device
EMH2401-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 3A EMH8
EMH2402 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device
EMH2402-TL-E 制造商:SANYO 功能描述:Nch 30V 3.5A 0.069 dlgW Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 30V 3.5A EMH8 制造商:Sanyo 功能描述:0
EMH2407 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2407_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2407R 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2407-S-TL-H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube